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1. Microwave induced magnetoresistance and zero-resistance states

Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation, R. G. Mani et al., in the Proc. of The 26th Intl. Conf. on the Phys. of Semicon., Edinburgh, 29 July - 2 August 2002, IOP Conf. Ser. 171, eds. A. R. Long and J. H. Davies (IOP, Bristol, 2003) H112; cond-mat/0305507.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Nature (London) 420, 646 (2002), (Get PDF) [&].

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high-mobility GaAs/AlGaAs devices, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 193304 (2004), (Get PDF) [*] . cond-mat/0303034.

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima, R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky, , Phys. Rev. B 70, 1553310 (2004), (Get PDF) [*] . cond-mat/0306388.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures, R. G. Mani, Physica E (Amsterdam) 22, 1 (2004), (Get PDF); [$] cond-mat/0407367.

Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. Lett. 92, 146801 (2004), (Get PDF) [*]. cond-mat/0311010.

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices, R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 161306 (2004), (Get PDF) [*]. cond-mat/0310474.

Novel non-equilibrium zero-resistance states in the high mobility GaAs/AlGaAs system, R. G. Mani, in Advances in Solid State Physics, vol. 44, edited by B. Kramer (Springer-Verlag, Heidelberg, 2004) pp 135 –146.

Novel zero-resistance states induced by photoexcitation in the high mobility GaAs/AlGaAs two-dimensional electron system, R. G. Mani, Physica E (Amsterdam) 25, 189 (2004), (Get PDF) [$].

Radiation induced zero-resistance states with resolved Landau levels, R. G Mani, Appl. Phys. Lett. 85, 4962 (2004), (Get PDF) [#].

Zero-resistance states and oscillatory magnetoresistance induced by microwave excitation in high mobility GaAs/AlGaAs devices, R. G. Mani, in the Proceedings of the 12th International Symposium "Nanostructures: Physics and Technology," St. Petersburg, Russia, 21-25 June 2004, Co-Chairs: Zh. Alferov and L. Esaki, (Ioffe Institute, St. Petersburg, 2004), pp. 7 - 9.

Spin characterization and control for quantum information processing over the regime of the radiation-induced zero-resistance states, R. G. Mani, IEEE Transactions on Nanotechnology 4, 27 (2005), (Get PDF) [<]. cond-mat/0407143.

Comment on cond-mat/0409228 "Microwave photoresponse in the 2D electron system caused by intra-landau level transitions", R. G. Mani, cond-mat/0410227.

Possibility of a magnetic-field sweep-direction-dependent hysteretic effect in the microwave excited 2DES, R. G. Mani, Proc. of the 27th Intl. Conf. on the Phys. of Semiconductors - Flagstaff AZ, 26 - 30 August 2004, edited by J. Menendez and C. G. van der Walle, AIP Proceedings, vol 772 (AIP, Melville, NY 2005), p. 517.[#]

Photo-excited zero-resistance states in the GaAs/AlGaAs system, R. G. Mani, Intl. J. Mod. Phys. 18, 3473 (2004), (Get PDF) [~]; cond-mat/0504206

AC-driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices, R. G. Mani, Microelect. Journal 36, 366 (2005).

Radiation-induced oscillatory magnetoresistance in a tilted magnetic field in GaAs/AlGaAs devices, R. G. Mani, Phys. Rev. B 72, 075327 (2005), (Get PDF) [*].

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2. Fractional quantized Hall effect

Fractional quantum Hall effects as an example of fractal geometry in nature, R. G. Mani and K. von Klitzing, Z. Phys. B 100, 635 (1996), (Get PDF) [+].

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3. "Anti Hall bar within a Hall bar" and dual simultaneous quantized Hall effects

Realization of dual, tunable, ordinary- and quantized- Hall resistances in doubly connected GaAs/AlGaAs heterostructures, R. G. Mani and K. von Klitzing, Z. Phys. B 92, 335 (1993).

Hall effect under null current conditions, R. G. Mani and K. von Klitzing, Appl. Phys. Lett. 64, 1262 (1994), (Get PDF) [#].

Dual ordinary- and quantum- Hall effects, R. G. Mani, K. von Klitzing and K. Ploog, in Proceedings of the 11th International Conference on High Magnetic Fields in the Physics of Semiconductors, edited by D. Heiman (World Scientific, Singapore, 1995), p. 146.

Transport study of GaAs/AlGaAs heterostructure and n-type GaAs devices in the "anti Hall bar within a Hall bar" configuration, R. G. Mani, J. Phys. Soc. Jpn. 65, 1751 (1996), (Get PDF) [@].

Experimental technique for realizing dual and multiple Hall effects in a single specimen, R. G. Mani, Europhys. Lett. 34, 139 (1996), (Get PDF) [^].

Steady state bulk current at high magnetic fields in Corbino-type GaAs/AlGaAs heterostructure devices, R. G. Mani, Europhys. Lett. 36, 203 (1996), (Get PDF) [^].

Dual Hall effects in inhomogeneous doubly connected GaAs/AlGaAs heterostructure devices, R. G. Mani, Appl. Phys. Lett. 70, 2879 (1997), (Get PDF) [#]

Dual ordinary, integral quantum, and fractional quantum Hall effects in partially gated doubly connected GaAs/AlGaAs heterostructure devices, R. G. Mani, Phys. Rev. B 55, 15838 (1998), (Get PDF) [*].

Multiple ordinary- and quantum- Hall effects in gated multiply connected GaAs/AlGaAs heterostructure devices, R. G. Mani, in the Proceedings of the 24th Int. Conference on the Physics of Semiconductors, Jerusalem, Israel. August 2-7, 1998. edited by D. Gershoni, (World Scientific, Singapore, 1999) article VI-C-16 #0588.

Voltage and current distribution in a doubly connected two-dimensional quantum Hall system, M. Oswald, J. Oswald, and R. G. Mani, Phys. Rev. B 72, 035334 (2005) (Get PDF). [*]

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4. Novel multiply connected Hall effect device

Temperature insensitive offset reduction in a Hall effect device, R. G. Mani and K. von Klitzing, Appl. Phys. Lett. 64, 3121 (1994), (Get PDF) [#].

Method for simultaneously reducing the misalignment offset, and separating the Hall voltage from the off-diagonal piezoresistive voltage in Hall effect and piezoresistive devices based on Silicon, R. G. Mani et al., Appl. Phys. Lett. 67, 2223 (1995), (Get PDF) [#].

Novel Concepts in Hall Sensors, R. G. Mani et al., in High Magnetic Fields in the Physics of Semiconductors II, Vol. 2 (Proc. 12th Intern. Conf. Appl. High Magnetic Fields, Würzburg 1996), edited by G. Landwehr and W. Ossau (World Scientific, Singapore, 1997) pp 1021-1024.

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5. Quantum Information Processing

Nuclear Spin Memory and Logic in Quantum Hall Semicon. Nanostr. for Quantum Computing Applications, R. G. Mani, W. B. Johnson, V. Narayanamurti, V. Privman and Y. H. Zhang, Physica E 12, 152 (2002), (Get PDF) [$].

Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing, R. G. Mani, W. B. Johnson, and V. Narayanamurti, Superlattices and Microstructures 32, 261 (2002).

Initialization of a nuclear spin system over the quantum Hall regime for quantum information processing, R. G. Mani, W. B. Johnson, and V. Narayanamurti, in the Proceedings of 15th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, Oxford, 5-9 August 2002, Institute of Physics Conference Series Number 171, edited by A. R. Long and J. H. Davies (IOP, Bristol, 2003) 1.6, condmat-0308501.

Nuclear spin based quantum information processing at high magnetic fields, R. G. Mani, W. B. Johnson, and V. Narayanamurti, Nanotechnology 14, 515 (2003), (Get PDF) [>].

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6. Semiconductors and Superconductivity

Scaling magnetoresistance induced by superconducting contacts in n-GaAs, R. G. Mani, L. Ghenim, and T. N. Theis, Phys. Rev. B45, 12098 (1992), (Get PDF) [*].

Pressure study of proximity effect induced scaling magnetoresistance in GaAs, L. Ghenim and R. G. Mani, Appl. Phys. Lett. 60, 2391 (1992), (Get PDF) [#].

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7. Transport in quantum wires

Localization at high magnetic fields in GaAs/AlGaAs quantum wires, R. G. Mani and K. von Klitzing, Phys. Rev. B (rapid comm.) 46, 9877 (1992), (Get PDF) [*].

Magnetoresistance over the intermediate localization regime in GaAs/AlGaAs quantum wires, R. G. Mani, K. von Klitzing, and K. Ploog, Phys. Rev. B 48, 4571 (1993), (Get PDF) [*].

Magnetotransport study of GaAs/AlGaAs quantum wires, R. G. Mani et al., Surf. Sci. 305, 654 (1994) .

Hall effect over integral filling factors in GaAs/AlGaAs quantum wires, R. G. Mani, K. von Klitzing and K. Ploog, Phys. Rev. B. 51, 2584 (1995), (Get PDF) [*].

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8. GaAs/AlGaAs transport and quantized Hall effect

Long range potentials and the breakdown of the quantum Hall effect in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, in the Proceedings of the 19th International Conference on the Physics of Semiconductors, edited by W. Zawadski (Institute of Physics-Polish Academy of Sciences, Warsaw, 1989), p. 181.

Study of the single particle and the transport lifetimes in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, Phys. Rev. B (Rapid Comm.) 37, 4299 (1988), (Get PDF) [*].

Conductance fluctuations on the integer quantum Hall plateaus in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics II- Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer - Verlag, Berlin, 1989), p. 36.

Inhomogeneous broadening and the breakdown of the quantum Hall effect in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, Sol. St. Comm. 72, 949, (1989), (Get PDF) [$].

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9. Narrow gap semiconductors

Phase Phase differences between quantum oscillations of the magnetoresistance and the Hall effect in Hg1-xMnxTe and Hg1-xCdxTe, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics - Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer - Verlag, Berlin, 1987), p. 436.

Magnetophonon effect in Hg1-xCdxTe, R. G. Mani, J. R. Anderson, J. B. Choi, and D. A. Nelson, Phys. Rev. B 36, 9146 (1987), (Get PDF) [*].

Phase differences between quantum oscillations of the magnetoresistance and the Hall effect in Hg1-xMnxTe and Hg1-xCdxTe, R. G. Mani, J. R. Anderson, and W. B. Johnson, J. Phys. Chem. Solids 48, 687 (1987).

The shallow resonant acceptor in semimagnetic zero-gap Hg1-xMnxTe, R. G. Mani and J. R. Anderson, in Shallow Impurities in Semiconductors 1988, Proceedings of the 3rd International Conference, edited by B. Monemar, IOP Conference Series 95 (Institute of Physics, Bristol, 1989), p.371.

Magnetotransport on HgTe/CdTe superlattices grown by LAMBE, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, in High Magnetic Fields in Semiconductor Physics II- Proc. Intl. Conf., Wurzburg, ed: G. Landwehr (Springer - Verlag, Berlin, 1989), p. 207.

Influence of the resonant acceptor state on the magnetotransport properties of zerogap Hg1-xMnxTe, R. G. Mani and J. R. Anderson, Phys. Rev. B 38, 3354 (1988).

Shubnikov - de Haas oscillations in HgTe/CdTe superlattices grown by LAMBE, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, Phys. Rev. B (Rapid Comm.) 39, 1419 (1989).

Weak localization and quantum interference effects in HgTe/CdTe superlattices grown by laser-molecular beam epitaxy, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, Semicond. Sci. Technol. 5, S 287 (1990).

Possibility of a metal-insulator transition at the Mott critical field in InSb and Hg1-xCdxTe, R. G. Mani, Phys. Rev. B (Rapid Comm.) 40, 8091 (1989).

Observation of resonant acceptor bound polaron in zero-gap Hg1-xMnxTe, J. B. Choi, R. G. Mani, H. D. Drew, and P. Becla, Semicond. Sci. Technol. 5, S 284 (1990).

Influence of localization on the Hall effect in narrow gap semiconductors, R. G. Mani, Phys. Rev. B (Rapid Comm.) 41, 7922 (1990), (Get PDF) [*].

Temperature induced intraband transition in HgTe/CdTe superlattices, J. Choi, L. Ghenim, R. G. Mani, H. Drew, and J. T. Cheung, Phys. Rev. B (Rapid Comm.) 41, 10872 (1990).

Magnetic field induced localization in the narrow gap semiconductors Hg1-xCdxTe and InSb, R. G. Mani and J. R. Anderson, in the Proceedings of the 20th International Conference on the Physics of Semiconductors, edited by E. M Anastassakis and J. D. Joannopoulos, (World Scientific, Singapore, 1990), p. 2570.

Low field transport in HgTe/CdTe superlattices grown by LAMBE: Quantum interference effects, L. Ghenim, R. G. Mani, J. R. Anderson and J. T. Cheung, Sol. St. Comm., 75, 341 (1990).

Influence of localization on the Hall effect in narrow gap, bulk semiconductors, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics III- Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer - Verlag, Berlin-Heidelberg, 1992), p. 454.

Weak localization in the narrow gap semiconductors Hg1-xCdxTe and InSb, R. G. Mani and L. Ghenim, in the Proceedings of the Localization Conference in London, 1990.

Observation of resonant acceptor bound polaron in zero-gap Hg1-xMnxTe, J. B. Choi, R. G. Mani, H. D. Drew, and P. Becla, Phys. Rev. B 42, 3454 (1990).

Weak localization in the narrow-gap, bulk semiconductors Hg1-xCdxTe and InSb, R. G. Mani, L. Ghenim and J. B. Choi, Sol. St. Comm., 79, 693 (1991), (Get PDF) ($).

Quantum coherence effects and field induced localization in InSb, R. G. Mani, L. Ghenim, and J. B. Choi, Phys. Rev. B43, 12630 (1991) .

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10. Crystal Growth

Crystal growth of Hg1-xMnxTe by solid state recrystallization, R. G. Mani, T. McNair, C. R. Lu, and R. Grober, J. Crystal Growth 97, 617 (1989) (Get PDF).

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11. Patents

Null (net) current Hall effect device for reducing resistive offsets, R. G. Mani et al, German Patent Registration P.4307249.6, P.4308375.7 (1993), (Get PDF)

Hall effect device with current and Hall voltage contacts, R. G. Mani et al., PCT Registration EP 94/00701, Taiwan Patent Registration 83102109 (1994) .

Method for simultaneously reducing the misalignment offset, and separating the shear piezoresistive effect from the Hall effect, in doubly connected devices based on Silicon, R. G. Mani, et al., European Patent Registration 94115388.4 (1994).

Novel Hall effect device, R. G. Mani et al., Taiwan Patent 072482 (1995).

Hall effect device with current and Hall voltage connection points, R. G. Mani et al., U. S. Patent No. 5,646,527 (1997), (Get PDF)

Halleffekt-einrichtung mit strom- und hallspannungs-anschlüssen, R. G. Mani et al., Patent in Germany, EP 689,723 (1998), (Get PDF)

Dispositif a effet Hall comportant des points raccordement de courant electrique et de tension de Hall, R. G. Mani et al., Patent in France, EP 689,723 (1998).

Hall-effect device with current and Hall-voltage connection points, R. G. Mani et al., Patent in the United Kingdom, EP 689,723 (1998).

Offset reduction and separation of Hall and piezoresistive voltages through current injection, R. G. Mani et al., US Patent 6,008,643 (1999), (Get PDF)

Method for compensating the piezoresistive offset voltage in doubly connected Hall effect devices based on silicon. R. G. Mani et al., Patent in the United Kingdom, EP 704710 (2003) .

Méthode pour compenser la tension piézorésistive de décalage d'un dispositif à effet Hall à connection double à base de silicium, R. G. Mani et al., Patent in France, EP 704710 (2003).

Verfahren zur Kompensation der piezoresistiver offsetspannung in doppelverbundenen siliziumbasierenden Hall Effekt Elementen, R. G. Mani et al., Patent in Germany, 69432102 (2003), (Get PDF).

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