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1. Microwave induced magnetoresistance and zeroresistance states
Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation, R. G. Mani et al., in the Proc. of The 26th Intl. Conf. on the Phys. of Semicon., Edinburgh, 29 July  2 August 2002, IOP Conf. Ser. 171, eds. A. R. Long and J. H. Davies (IOP, Bristol, 2003) H112; condmat/0305507.
Zeroresistance states induced by electromagneticwave excitation in GaAs/AlGaAs heterostructures, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Nature (London) 420, 646 (2002), (Get PDF) [&].
Radiationinduced oscillatory magnetoresistance as a sensitive probe of the zerofield spin splitting in highmobility GaAs/AlGaAs devices, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 193304 (2004), (Get PDF) [*] . condmat/0303034.
Radiation induced zeroresistance states in GaAs/AlGaAs heterostructures: Voltagecurrent characteristics and intensity dependence at the resistance minima, R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky, , Phys. Rev. B 70, 1553310 (2004), (Get PDF) [*] . condmat/0306388.
Zeroresistance states induced by electromagneticwave excitation in GaAs/AlGaAs heterostructures, R. G. Mani, Physica E (Amsterdam) 22, 1 (2004), (Get PDF); [$] condmat/0407367.
Demonstration of a 1/4 cycle phase shift in the radiationinduced oscillatorymagnetoresistance in GaAs/AlGaAs devices, R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. Lett. 92, 146801 (2004), (Get PDF) [*]. condmat/0311010.
Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices, R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 161306 (2004), (Get PDF) [*]. condmat/0310474.
Novel nonequilibrium zeroresistance states in the high mobility GaAs/AlGaAs system, R. G. Mani, in Advances in Solid State Physics, vol. 44, edited by B. Kramer (SpringerVerlag, Heidelberg, 2004) pp 135 –146.
Novel zeroresistance states induced by photoexcitation in the high mobility GaAs/AlGaAs twodimensional electron system, R. G. Mani, Physica E (Amsterdam) 25, 189 (2004), (Get PDF) [$].
Radiation induced zeroresistance states with resolved Landau levels, R. G Mani, Appl. Phys. Lett. 85, 4962 (2004), (Get PDF) [#].
Zeroresistance states and oscillatory magnetoresistance induced by microwave excitation in high mobility GaAs/AlGaAs devices, R. G. Mani, in the Proceedings of the 12th International Symposium "Nanostructures: Physics and Technology," St. Petersburg, Russia, 2125 June 2004, CoChairs: Zh. Alferov and L. Esaki, (Ioffe Institute, St. Petersburg, 2004), pp. 7  9.
Spin characterization and control for quantum information processing over the regime of the radiationinduced zeroresistance states, R. G. Mani, IEEE Transactions on Nanotechnology 4, 27 (2005), (Get PDF) [<]. condmat/0407143.
Comment on condmat/0409228 "Microwave photoresponse in the 2D electron system caused by intralandau level transitions", R. G. Mani, condmat/0410227.
Possibility of a magneticfield sweepdirectiondependent hysteretic effect in the microwave excited 2DES, R. G. Mani, Proc. of the 27th Intl. Conf. on the Phys. of Semiconductors  Flagstaff AZ, 26  30 August 2004, edited by J. Menendez and C. G. van der Walle, AIP Proceedings, vol 772 (AIP, Melville, NY 2005), p. 517.[#]
Photoexcited zeroresistance states in the GaAs/AlGaAs system, R. G. Mani, Intl. J. Mod. Phys. 18, 3473 (2004), (Get PDF) [~]; condmat/0504206
ACdriven zeroresistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices, R. G. Mani, Microelect. Journal 36, 366 (2005).
Radiationinduced oscillatory magnetoresistance in a tilted magnetic field in GaAs/AlGaAs devices, R. G. Mani, Phys. Rev. B 72, 075327 (2005), (Get PDF) [*].
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2. Fractional quantized Hall effect
Fractional quantum Hall effects as an example of fractal geometry in nature, R. G. Mani and K. von Klitzing, Z. Phys. B 100, 635 (1996), (Get PDF) [+].
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3. "Anti Hall bar within a Hall bar" and dual simultaneous quantized Hall effects
Realization of dual, tunable, ordinary and quantized Hall resistances in doubly connected GaAs/AlGaAs heterostructures, R. G. Mani and K. von Klitzing, Z. Phys. B 92, 335 (1993).
Hall effect under null current conditions, R. G. Mani and K. von Klitzing, Appl. Phys. Lett. 64, 1262 (1994), (Get PDF) [#].
Dual ordinary and quantum Hall effects, R. G. Mani, K. von Klitzing and K. Ploog, in Proceedings of the 11th International Conference on High Magnetic Fields in the Physics of Semiconductors, edited by D. Heiman (World Scientific, Singapore, 1995), p. 146.
Transport study of GaAs/AlGaAs heterostructure and ntype GaAs devices in the "anti Hall bar within a Hall bar" configuration, R. G. Mani, J. Phys. Soc. Jpn. 65, 1751 (1996), (Get PDF) [@].
Experimental technique for realizing dual and multiple Hall effects in a single specimen, R. G. Mani, Europhys. Lett. 34, 139 (1996), (Get PDF) [^].
Steady state bulk current at high magnetic fields in Corbinotype GaAs/AlGaAs heterostructure devices, R. G. Mani, Europhys. Lett. 36, 203 (1996), (Get PDF) [^].
Dual Hall effects in inhomogeneous doubly connected GaAs/AlGaAs heterostructure devices, R. G. Mani, Appl. Phys. Lett. 70, 2879 (1997), (Get PDF) [#]
Dual ordinary, integral quantum, and fractional quantum Hall effects in partially gated doubly connected GaAs/AlGaAs heterostructure devices, R. G. Mani, Phys. Rev. B 55, 15838 (1998), (Get PDF) [*].
Multiple ordinary and quantum Hall effects in gated multiply connected GaAs/AlGaAs heterostructure devices, R. G. Mani, in the Proceedings of the 24th Int. Conference on the Physics of Semiconductors, Jerusalem, Israel. August 27, 1998. edited by D. Gershoni, (World Scientific, Singapore, 1999) article VIC16 #0588.
Voltage and current distribution in a doubly connected twodimensional quantum Hall system, M. Oswald, J. Oswald, and R. G. Mani, Phys. Rev. B 72, 035334 (2005) (Get PDF). [*]
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4. Novel multiply connected Hall effect device
Temperature insensitive offset reduction in a Hall effect device, R. G. Mani and K. von Klitzing, Appl. Phys. Lett. 64, 3121 (1994), (Get PDF) [#].
Method for simultaneously reducing the misalignment offset, and separating the Hall voltage from the offdiagonal piezoresistive voltage in Hall effect and piezoresistive devices based on Silicon, R. G. Mani et al., Appl. Phys. Lett. 67, 2223 (1995), (Get PDF) [#].
Novel Concepts in Hall Sensors, R. G. Mani et al., in High Magnetic Fields in the Physics of Semiconductors II, Vol. 2 (Proc. 12th Intern. Conf. Appl. High Magnetic Fields, Würzburg 1996), edited by G. Landwehr and W. Ossau (World Scientific, Singapore, 1997) pp 10211024.
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5. Quantum Information Processing
Nuclear Spin Memory and Logic in Quantum Hall Semicon. Nanostr. for Quantum Computing Applications, R. G. Mani, W. B. Johnson, V. Narayanamurti, V. Privman and Y. H. Zhang, Physica E 12, 152 (2002), (Get PDF) [$].
Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing, R. G. Mani, W. B. Johnson, and V. Narayanamurti, Superlattices and Microstructures 32, 261 (2002).
Initialization of a nuclear spin system over the quantum Hall regime for quantum information processing, R. G. Mani, W. B. Johnson, and V. Narayanamurti, in the Proceedings of 15th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, Oxford, 59 August 2002, Institute of Physics Conference Series Number 171, edited by A. R. Long and J. H. Davies (IOP, Bristol, 2003) 1.6, condmat0308501.
Nuclear spin based quantum information processing at high magnetic fields, R. G. Mani, W. B. Johnson, and V. Narayanamurti, Nanotechnology 14, 515 (2003), (Get PDF) [>].
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6. Semiconductors and Superconductivity
Scaling magnetoresistance induced by superconducting contacts in nGaAs, R. G. Mani, L. Ghenim, and T. N. Theis, Phys. Rev. B45, 12098 (1992), (Get PDF) [*].
Pressure study of proximity effect induced scaling magnetoresistance in GaAs, L. Ghenim and R. G. Mani, Appl. Phys. Lett. 60, 2391 (1992), (Get PDF) [#].
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7. Transport in quantum wires
Localization at high magnetic fields in GaAs/AlGaAs quantum wires, R. G. Mani and K. von Klitzing, Phys. Rev. B (rapid comm.) 46, 9877 (1992), (Get PDF) [*].
Magnetoresistance over the intermediate localization regime in GaAs/AlGaAs quantum wires, R. G. Mani, K. von Klitzing, and K. Ploog, Phys. Rev. B 48, 4571 (1993), (Get PDF) [*].
Magnetotransport study of GaAs/AlGaAs quantum wires, R. G. Mani et al., Surf. Sci. 305, 654 (1994) .
Hall effect over integral filling factors in GaAs/AlGaAs quantum wires, R. G. Mani, K. von Klitzing and K. Ploog, Phys. Rev. B. 51, 2584 (1995), (Get PDF) [*].
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8. GaAs/AlGaAs transport and quantized Hall effect
Long range potentials and the breakdown of the quantum Hall effect in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, in the Proceedings of the 19th International Conference on the Physics of Semiconductors, edited by W. Zawadski (Institute of PhysicsPolish Academy of Sciences, Warsaw, 1989), p. 181.
Study of the single particle and the transport lifetimes in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, Phys. Rev. B (Rapid Comm.) 37, 4299 (1988), (Get PDF) [*].
Conductance fluctuations on the integer quantum Hall plateaus in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics II Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer  Verlag, Berlin, 1989), p. 36.
Inhomogeneous broadening and the breakdown of the quantum Hall effect in GaAs/AlGaAs, R. G. Mani and J. R. Anderson, Sol. St. Comm. 72, 949, (1989), (Get PDF) [$].
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9. Narrow gap semiconductors
Phase Phase differences between quantum oscillations of the magnetoresistance and the Hall effect in Hg1xMnxTe and Hg1xCdxTe, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics  Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer  Verlag, Berlin, 1987), p. 436.
Magnetophonon effect in Hg1xCdxTe, R. G. Mani, J. R. Anderson, J. B. Choi, and D. A. Nelson, Phys. Rev. B 36, 9146 (1987), (Get PDF) [*].
Phase differences between quantum oscillations of the magnetoresistance and the Hall effect in Hg1xMnxTe and Hg1xCdxTe, R. G. Mani, J. R. Anderson, and W. B. Johnson, J. Phys. Chem. Solids 48, 687 (1987).
The shallow resonant acceptor in semimagnetic zerogap Hg1xMnxTe, R. G. Mani and J. R. Anderson, in Shallow Impurities in Semiconductors 1988, Proceedings of the 3rd International Conference, edited by B. Monemar, IOP Conference Series 95 (Institute of Physics, Bristol, 1989), p.371.
Magnetotransport on HgTe/CdTe superlattices grown by LAMBE, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, in High Magnetic Fields in Semiconductor Physics II Proc. Intl. Conf., Wurzburg, ed: G. Landwehr (Springer  Verlag, Berlin, 1989), p. 207.
Influence of the resonant acceptor state on the magnetotransport properties of zerogap Hg1xMnxTe, R. G. Mani and J. R. Anderson, Phys. Rev. B 38, 3354 (1988).
Shubnikov  de Haas oscillations in HgTe/CdTe superlattices grown by LAMBE, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, Phys. Rev. B (Rapid Comm.) 39, 1419 (1989).
Weak localization and quantum interference effects in HgTe/CdTe superlattices grown by lasermolecular beam epitaxy, L. Ghenim, R. G. Mani, J. R. Anderson, and J. T. Cheung, Semicond. Sci. Technol. 5, S 287 (1990).
Possibility of a metalinsulator transition at the Mott critical field in InSb and Hg1xCdxTe, R. G. Mani, Phys. Rev. B (Rapid Comm.) 40, 8091 (1989).
Observation of resonant acceptor bound polaron in zerogap Hg1xMnxTe, J. B. Choi, R. G. Mani, H. D. Drew, and P. Becla, Semicond. Sci. Technol. 5, S 284 (1990).
Influence of localization on the Hall effect in narrow gap semiconductors, R. G. Mani, Phys. Rev. B (Rapid Comm.) 41, 7922 (1990), (Get PDF) [*].
Temperature induced intraband transition in HgTe/CdTe superlattices, J. Choi, L. Ghenim, R. G. Mani, H. Drew, and J. T. Cheung, Phys. Rev. B (Rapid Comm.) 41, 10872 (1990).
Magnetic field induced localization in the narrow gap semiconductors Hg1xCdxTe and InSb, R. G. Mani and J. R. Anderson, in the Proceedings of the 20th International Conference on the Physics of Semiconductors, edited by E. M Anastassakis and J. D. Joannopoulos, (World Scientific, Singapore, 1990), p. 2570.
Low field transport in HgTe/CdTe superlattices grown by LAMBE: Quantum interference effects, L. Ghenim, R. G. Mani, J. R. Anderson and J. T. Cheung, Sol. St. Comm., 75, 341 (1990).
Influence of localization on the Hall effect in narrow gap, bulk semiconductors, R. G. Mani and J. R. Anderson, in High Magnetic Fields in Semiconductor Physics III Proc. Intl. Conf., Wurzburg, edited by G. Landwehr (Springer  Verlag, BerlinHeidelberg, 1992), p. 454.
Weak localization in the narrow gap semiconductors Hg1xCdxTe and InSb, R. G. Mani and L. Ghenim, in the Proceedings of the Localization Conference in London, 1990.
Observation of resonant acceptor bound polaron in zerogap Hg1xMnxTe, J. B. Choi, R. G. Mani, H. D. Drew, and P. Becla, Phys. Rev. B 42, 3454 (1990).
Weak localization in the narrowgap, bulk semiconductors Hg1xCdxTe and InSb, R. G. Mani, L. Ghenim and J. B. Choi, Sol. St. Comm., 79, 693 (1991), (Get PDF) ($).
Quantum coherence effects and field induced localization in InSb, R. G. Mani, L. Ghenim, and J. B. Choi, Phys. Rev. B43, 12630 (1991) .
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10. Crystal Growth
Crystal growth of Hg1xMnxTe by solid state recrystallization, R. G. Mani, T. McNair, C. R. Lu, and R. Grober, J. Crystal Growth 97, 617 (1989) (Get PDF).
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11. Patents
Null (net) current Hall effect device for reducing resistive offsets, R. G. Mani et al, German Patent Registration P.4307249.6, P.4308375.7 (1993), (Get PDF)
Hall effect device with current and Hall voltage contacts, R. G. Mani et al., PCT Registration EP 94/00701, Taiwan Patent Registration 83102109 (1994) .
Method for simultaneously reducing the misalignment offset, and separating the shear piezoresistive effect from the Hall effect, in doubly connected devices based on Silicon, R. G. Mani, et al., European Patent Registration 94115388.4 (1994).
Novel Hall effect device, R. G. Mani et al., Taiwan Patent 072482 (1995).
Hall effect device with current and Hall voltage connection points, R. G. Mani et al., U. S. Patent No. 5,646,527 (1997), (Get PDF)
Halleffekteinrichtung mit strom und hallspannungsanschlüssen, R. G. Mani et al., Patent in Germany, EP 689,723 (1998), (Get PDF)
Dispositif a effet Hall comportant des points raccordement de courant electrique et de tension de Hall, R. G. Mani et al., Patent in France, EP 689,723 (1998).
Halleffect device with current and Hallvoltage connection points, R. G. Mani et al., Patent in the United Kingdom, EP 689,723 (1998).
Offset reduction and separation of Hall and piezoresistive voltages through current injection, R. G. Mani et al., US Patent 6,008,643 (1999), (Get PDF)
Method for compensating the piezoresistive offset voltage in doubly connected Hall effect devices based on silicon. R. G. Mani et al., Patent in the United Kingdom, EP 704710 (2003) .
Méthode pour compenser la tension piézorésistive de décalage d'un dispositif à effet Hall à connection double à base de silicium, R. G. Mani et al., Patent in France, EP 704710 (2003).
Verfahren zur Kompensation der piezoresistiver offsetspannung in doppelverbundenen siliziumbasierenden Hall Effekt Elementen, R. G. Mani et al., Patent in Germany, 69432102 (2003), (Get PDF).
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12. Copyright Symbol List
The copyrights for the published articles are as given below:
* Copyright  American Physical Society
# Copyright  American Institute of Physics
$ Copyright  Elsevier B. V.
+ Copyright  SpringerVerlag
& Copyright  Nature Publishing Group
@ Copyright  Physical Society of Japan
^ Copyright  Les Editions de Physique
> Copyright  Institute of Physics Publishing
< Copyright  IEEE
~ Copyright  World Scientific
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