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Our research effort is mainly concentrated on growth of semiconductor thin films and their real time characterization by a unique growth system, High-Pressure CVD, which makes us enable to grow the film on a hotter substrate than the melting point temperature of the growth material. We are also interested in the development of a unique Solid State Molecular Sensor (SSMS) system.

10.14.07
Talks at AVS 54rd International Symposium and Exhibition


11.27.06
Talk at 2006 MRS Fall Meeting


11.12.06
Talk at Third International Workshop on Indium Nitride ( website )

Given presentation
11.12.06
We present single phase InN film grown on Sapphire substrates with an XRD FWHM of 386 arcsec.
09.22.06
- The characterization of InN layers grown by high-pressure chemical vapor deposition, M. Alevli, G. Durkaya, W. Fenwick, A. Weerasekara, V. Woods, I. Ferguson, A.G.U. Perera and N. Dietz, Appl. Phys. Lett. 89 pp. 112119 (2006).   PDF file ( 275 KB )

09.17.06
- A GaN/AlGaN ultraviolet/infrared dual-band detector, G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu, Appl. Phys. Lett. 89 pp. 091113 (2006).   PDF file ( 195 KB )

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