A. G. U. Perera, S. G. Matsik, and V. Y. Letov
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303
H. C. Liu, M. Gao, and M. Buchanan
Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
W. J. Schaff
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
Spontaneous and triggered pulsing behavior in InGaAs multiquantum well devices driven by a constant bias voltage are reported. Bias regions for the occurrence of spontaneous periodic oscillations as well as damped triggered pulsing were experimentally determined. An empirical model based on the observed shape of the I-V curve and the negative differential conductance is proposed to qualitatively explain both the triggered pulsing and the spontaneous oscillating behavior, which could lead to novel infrared detection techniques and neural network applications.
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