A.G. U. Perera, S. G. Matsik, B. Yaldiz
Department of Physics an Astronomy, Georgia State University, Atlanta, GA
H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski and M. Buchanan
Institute for Microstructural Studies, NRC-Canada, Ottawa, Ontario, Canada
Results are presented on the performance of a novel Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) wavelength-tailorable detector. The detection mechanism is based on free-carrier absorption in the heavily doped emitter regions and internal emission across a workfunction barrier caused by the bandgap offset at the heterojunction. The HEIWIP detectors have the high responsivity of free-carrier absorption detectors and the low dark current of QWIP type detectors. For a 70 + 2 cutoff wavelength detector, a responsivity of 11 A/W and a D* = 1 * 1013 cm √Hz/W with a photocurrent efficiency of 24% was observed at 20 μm. From the 300 K background phottocurrent, teh BLIP temperature for this HEIWIP detector was estimated to be 15 K. This HEIWIP detector provides an exciting new approach to FIR detection.
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