A. L. Korotkov, A. G. U. Perera, and W. Z. Shen
Department of Physics and Astronomy, Georgia State University, Atlanta,
GA 30303
J. Herfort and K. H. Ploog
Paul-Drude Institut fr Festkörperelektronik Hausvogteiplatz 5-7, 10117 Berlin, Germany
W. J. Schaff
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
H. C. Liu
Institute for Microstructural Sciences, National Research Council, Ottawa KIA 0R6, Canada
ABSTRACT
Far infrared (FIR)absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 µm and compared with the calculated results. Both Be (in the range 3 × 10 18 - 2.6 × 1019 cm -3) and C(1.8 × 1018 - 4.7 × 1019 cm-3)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors.
Return to Dr.
Perera's Homepage
Return to Physics &
Astronomy Homepage