A. G. U. Perera and W. Z. Shen,
Department of Physics and Astronomy, Georgia State University, Atlanta,
GA 30303
ABSTRACT
The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (> 40 um) detectors is briefly reviewed, both theoretically and experimentally. The emphasis is on the detector photoresponse mechanism and detector performance, which includes doping concentration dependence of workfunction, far-infrared free carrier absorption, internal photoemission, interfacial barrier collection, and detector dark current, responsivity, quantum efficiency, bias effects, cutoff wavelength, uniformity, crosstalk, photoconductive gain, response time and noise. Promising results indicate that p-GaAs HIWIP detectors have great potential to become a strong competitor in far-infrared applications.
Keywords: p-GaAs homojunction
interfacial workfunction internal photoemission (HIWIP), extended cutoff
wavelength, emitter layer concentration effect, photoresponse mechanism.
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