20 micron cutoff heterojunction interfacial work
function internal photoemission detectors
S. G. Matsik,a) M. B. M. Rinzan, D. G. Esaev, and A. G. U.
Perera
Department of Physics and Astronomy, Georgia State University, Atlanta,
Georgia 30303
H. C. Liu and M. Buchanan
Institute for Microstructural Sciences, National Research Council, Ottawa,
K1A 0R6, Canada
(Received 2 July 2003; accepted 23 October 2003;
published online 20 April 2004)
ABSTRACT
Results are reported on Heterojunction Interfacial Workfunction Internal
Photoemission (HEIWIP)
detectors designed for operation up to 20 micron.
The peak response of 100 mA/W at 12.5 micron with a
D*
of 2*10
11 Jones was observed with a cutoff wavelength of
~20 micron. The BLIP
temperature for
the devices was 40 K at 1.5 V bias. While the peak response remained almost
constant (~95
mA/W)
up to 40 K, the D* reduced to
5*10 9
Jones due to the increased dark current. The response
increased with doping while the dark current did not change significantly.
Hence, higher
responsivity and D* can be expected for designs with
higher doping. Designs utilizing increased
reflection from the bottom contact are suggested to improve the resonant
cavity enhancement for
optimizing the detectors, which should lead to higher D*
and BLIP temperature. © 2004
American Institute of Physics. @DOI: 10.1063/1.1634386
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