D. D. Coon
Department of Physics, University of Pittsburgh, Pittsburgh, PA 15260A. G. U. Perera
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303ABSTRACT
Large injection pulses are observed in simple circuits containing forward-biased silicon p-i-n (p+-n-n+) structures at liquid helium temperatures. The pulse rate is dependent on the intensity of infrared radiation incident on the device. The substantial voltage, current, and power output eliminates the need for on-chip or off-chip amplifiers. The first observation of the spectral response of such a detector as measured from 22 to 32 µm with a liquid-helium-cooled monochromator is reported. The response is similar to other extrinsic detectors and modulated by a multiple internal reflection interference pattern. The interference pattern and the origin of optical absorption are analyzed. © 1986 Pergamon Journals Ltd.
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