Homojunction Interfacial Workfunction Internal Photoemission (HIWIP) Infrared Detectors

A. G. U. Perera
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303

ABSTRACT
An analytic model is presented to describe the space-charge-limited (SCL) conduction in Si homojunction interfacial work-function internal photoemission far-infrared detectors. The basic detector unit is a thin n+-i-n+ structure, which is operated at low temperatures and characterized by an interfacial work function at the n+-i interface. The unique aspects of this case lead to simple analytic expressions for all variables of interest. The barrier shape and free-carrier concentration distribution in the i layer thickness, and compensating acceptor concentration, are calculated. The SCL current-voltage characteristic is also investigated as a function of i layer parameters. The results obtainted are useful for the IR detector design and performance optimization. © 1996 American Institute of Physics. [S0021-8979(96)01708-8]

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