Dietz Research Group - GSU, Physics Department, Atlanta, US

Our research effort is mainly concentrated on growth of semiconductor thin films and their real time characterization by a unique growth system, High-Pressure CVD, which makes us enable to grow the film on a hotter substrate than the melting point temperature of the growth material. We are also interested in the development of a unique Solid State Molecular Sensor (SSMS) system.

07.24.06
We presented in 28th International Conference of Physics of Semiconductors, Vienna, Austria

06.28.06

We present single phase InN film grown on GaN/Sapphire and Sapphire substrates with an XRD FWHM of 400 arcsec.

09.22.06
- The characterization of InN layers grown by high-pressure chemical vapor deposition, M. Alevli, G. Durkaya, W. Fenwick, A. Weerasekara, V. Woods, I. Ferguson, A.G.U. Perera and N. Dietz, Appl. Phys. Lett. 89 pp. 112119 (2006). PDF file ( 275 KB )

09.17.06
- A GaN/AlGaN ultraviolet/infrared dual-band detector, G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu, Appl. Phys. Lett. 89 pp. 091113 (2006). PDF file ( 195 KB )